Most Cited Patents

3,591 citations – Combined binary oxide semiconductor device.

Date of Patent: Oct. 16, 2007

Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich.

The exemplary embodiments of the present disclosure include semiconductor devices, such as transistors, that contain multicomponent oxide semiconductors. A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

a section view and a circuit diagram of a semiconductor device to which a FET according to the present invention is applied for driving a light emission device.

3,580 citations – Transistor and semiconductor devices.

Date of Patent: Jun. 20, 2006

Inventors: Masashi Kawasaki, Hideo Ohno.

In an npn-type transistor, the emitter and collector are made of n-type transparent semiconductor material, and the base is made of p-type transparent semiconductor material. The base electrode, emitter electrode, and collector electrode are formed in their respective regions. The n-type transparent semiconductor can be doped ZnO with group III or group VII elements, while the p-type transparent semiconductor can be doped ZnO with group I or group V elements.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.