Most Cited Patents

a characteristic view of a transistor of the present invention.

3,579 citations – Transistor and semiconductor device.

Date of Patent: Apr. 27, 2004

Inventors: Masashi Kawasaki, Hideo Ohno.

The transistor has a transparent channel layer made of zinc oxide or a similar transparent semiconductor. Transparent electrodes, which can be entirely or partially transparent, are used for the source, drain, and gate. These transparent electrodes are made of conductive materials like group III-doped ZnO. The gate insulating layer is a transparent insulating material, such as group V-doped ZnO. Transparent substrates like glass, sapphire, or plastic can be used if transparency is needed.

a sectional view showing a structure of a thin film transistor.

a graphic showing a Vg-Id characteristic of an example of the thin film transistor.

3,575 citations – Thin film transistor and matrix display device.

Date of Patent: May. 13, 2003

Inventors: Masashi Kawasaki, Hideo Ohno, Kazuki Kobayashi, Ikuo Sakono.

In a thin film transistor, a gate-insulating film is formed with a first insulating film (SiN) and a second insulating film (SiO). The semiconductor layer, including ZnO, is then formed on the second insulating film. This structure enhances crystalline characteristics and reduces interface defects. The oxide-based second insulating film prevents oxygen depletion from the semiconductor layer, maintaining favourable crystalline characteristics near the interface. This improves the TFT characteristics, resulting in low leakage current, high mobility, and favourable switching behaviour in the transparent semiconductor-based thin film transistor.

Page: 1 2 3 4 5 6 7 8 9 10

2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.