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Most Cited Patents

a schematic structural view of a TFT produced for evaluating an amorphous oxide semiconductor used for an optical sensor of the present invention.

3,541 citations – Sensor and image pickup device.

Date of Patent: Nov. 18, 2008

Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura.

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

3,539 citations – High-electron mobility transistor with zinc oxide.

Date of Patent: Sep. 12, 2006

Inventors: Jeff Nause, Shanthi Ganesan.

A zinc oxide (ZnO) FET uses a gate-insulating layer (aluminum nitride/aluminum gallium nitride or magnesium zinc oxide) to achieve high input amplitude. It operates in enhancement mode, like a silicon MOSFET, forming an inversion layer. The excellent insulation characteristics of the gate insulating layer increase the Schottky barrier, enabling the large input amplitude.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.