Categories: InventionsInventorsPatents

Most Cited Patents

a schematic diagram of a top-gate thin-film transistor for illustrating a method for fabricating an oxide-semiconductor device according to a First Embodiment.

3,549 citations – Method of fabricating oxide semiconductor device.

Date of Patent: Dec. 23, 2008

Inventors: Nobuyuki Kaji, Hisato Yabuta

The method for fabricating a device using an oxide semiconductor involves two main steps. First, the oxide semiconductor is formed on a substrate. Then, the conductivity of the oxide semiconductor is altered by irradiating a specific region with an energy ray.

a characteristics diagram showing the relation between the electric conductivity of a ZnO film and the flow rate ratio of the oxygen gas.

3,543 citations – Method for forming ZnO film, a method for forming ZnO semiconductor layer, a method for fabricating a semiconductor device, and a semiconductor device.

Date of Patent: May. 23, 2006

Inventors: Katsutoshi Takeda, Masao Isomura

On a substrate, a ZnO buffer layer is formed either with low electrical conductivity (≤ 1×10^-9 S/cm) or with a different crystal face diffraction peak than (002) and (004) in X-ray diffraction, achieved through sputtering. On top of the ZnO buffer layer, a ZnO semiconductor layer is formed. The semiconductor layer is created with a lower flow rate of oxygen gas in the sputtering process compared to the ZnO buffer layer formation.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.