Most Cited Patents

a cross-sectional view of a structure of a thin-film transistor according to the present invention.

3,551 citations – Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer.

Date of Patent: Nov. 18, 2008

Inventors: Tatsuya Iwasaki

A thin-film transistor consists of an oxide semiconductor channel layer that is transparent to visible light and has a refractive index of nx. There’s a gate-insulating layer on one side of the channel layer and a transparent layer with a refractive index of nt on the other side. In this design, nx is greater than nt.

A thin-film transistor includes a substrate with a refractive index of no. On top of the substrate, there’s a transparent layer with a refractive index of nt, and then a channel layer with a refractive index of nx. In this case, the relationship is nx>nt>no.

schematic view illustrating a method for manufacturing a field-effect transistor according to an embodiment of the present invention.

3,551 citations – Field-effect transistor and method for manufacturing the same.

Date of Patent: Aug. 12, 2008

Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki.

Method for manufacturing a field-effect transistor:

Form source and drain electrodes containing hydrogen/deuterium.
Create an oxide semiconductor layer with decreased electrical resistance by adding hydrogen/deuterium.
Allow hydrogen/deuterium diffusion from electrodes to the oxide semiconductor layer.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.