Most Cited Patents

illustrates a cross-sectional view of a typical thin film transistor having a top-gate/top-contact structure.

3,562 citations – Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.

Date of Patent: Jul. 22, 2008

Inventors: David H. Levy, Andrea C. Scuderi, Lyn M. Irving.

A thin film transistor is made with a zinc-oxide-containing semiconductor material and can include two electrodes. The process for fabricating this transistor device involves keeping the substrate temperature below 300°C during fabrication.

a top-plan view of the thin-film transistor according to an example embodiment.

3,560 citations – Transistor using an isovalent semiconductor oxide as the active channel layer.

Date of Patent: Dec. 09, 2008

Inventors: Randy L. Hoffman, Gregory S. Herman.

A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.