Most Cited Patents

a cross-sectional view cut along a substantially central line in a channel width direction of the thin film transistor.
3,538 citations – Thin film transistor having an etching protection film and manufacturing method thereof.
Date of Patent: Jun. 10, 2008

Inventors: Hiromitsu IshiiHitoshi HokariMotohiko YoshidaIkuhiro Yamaguchi.

The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.


a schematic sectional view of a first preferred embodiment of a semiconductor device according to the present invention.
3,526 citations – Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
Date of Patent: Mar. 10, 2009

Inventors: Yoshihiro Ito, Michio Kadota

The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.

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Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.

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