The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Sep. 01, 2005
Hiromitsu Ishii, Mitaka, JP;
Hitoshi Hokari, Hachioji, JP;
Motohiko Yoshida, Fussa, JP;
Ikuhiro Yamaguchi, Tokyo, JP;
Hiromitsu Ishii, Mitaka, JP;
Hitoshi Hokari, Hachioji, JP;
Motohiko Yoshida, Fussa, JP;
Ikuhiro Yamaguchi, Tokyo, JP;
Casio Computer Co., Ltd., Tokyo, JP;
Abstract
A thin film transistor of the present invention includes a semiconductor thin film (); a gate insulating film () formed on one surface of the semiconductor thin film (); a gate electrode () formed to be opposite to the semiconductor thin film () through the gate insulating film (); a source electrode () and a drain electrode () electrically connected to the semiconductor thin film (); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film () formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (), and having a contact hole () through which at least a part of each of the source region and the drain region is exposed wherein the source electrode () and the drain electrode () are connected to the semiconductor thin film () through the contact hole ().