Most Cited Patents

a cross-sectional view of a semiconductor device relating to the present invention.

3,634 citations – Semiconductor device and manufacturing method thereof.

Date of patent: Jun. 08, 2010

Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone.

The goal is to create a cost-effective semiconductor device using a simplified manufacturing process. This involves forming a thin film transistor with an oxide semiconductor film (such as zinc oxide). The steps include forming a gate electrode, a gate-insulating film, and an oxide semiconductor film on a substrate. Finally, the first and second conductive films are applied over the oxide semiconductor film. The oxide semiconductor film contains a crystallized region in the channel area.

illustrates an embodiment of an active matrix display area.

3,619 citations – Semiconductor device.

Date of Patent: Nov. 20, 2007

Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich.

The semiconductor device includes a channel made of a metal oxide, which can be zinc-gallium, cadmium-gallium, or cadmium-indium.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.