The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2004

Filed:

Jun. 06, 2001
Applicant:
Inventors:

Masashi Kawasaki, Sagamihara, JP;

Hideo Ohno, Sendai, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01L 1/244 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01L 1/244 ;
Abstract

A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source , a drain and a gate , or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer , a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.


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