The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Jan. 29, 2004
Masashi Kawasaki, Sagamihara, JP;
Hideo Ohno, Sendai, JP;
Masashi Kawasaki, Sagamihara, JP;
Hideo Ohno, Sendai, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
In an npn-type transistor, the emitterand the collectorare formed of an n-type transparent semiconductor, and the baseis formed by a p-type transparent semiconductor. The base electrode, the emitter electrodeand the collector electrodeare formed respectively on the base, the emitterand the collector. As the n-type transparent semiconductor, for example, n-type ZnO is used. The n-type ZnO is ZnO doped with, for example, group III elements, group VII elements. As the p-type transparent semiconductor, for example, p-type ZnO is used. The p-type ZnO is ZnO doped with, for example, group I elements and group V elements.