The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Oct. 31, 2002
Hideo Hosono, Kanagawa, JP;
Hiromichi Ota, Kanagawa, JP;
Masahiro Orita, Chiba, JP;
Kazushige Ueda, Kanagawa, JP;
Masahiro Hirano, Tokyo, JP;
Toshio Kamiya, Kanagawa, JP;
Hideo Hosono, Kanagawa, JP;
Hiromichi Ota, Kanagawa, JP;
Masahiro Orita, Chiba, JP;
Kazushige Ueda, Kanagawa, JP;
Masahiro Hirano, Tokyo, JP;
Toshio Kamiya, Kanagawa, JP;
Japan Science and Technology Agency, Kawaguchi, JP;
Abstract
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: MMO(ZnO), wherein Mis at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, Mis at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.