Aichi, Japan

Hiromichi Ota

Average Co-Inventor Count = 5.2

ph-index = 6

Forward Citations = 7,797(Granted Patents)

Forward Citations (Not Self Cited) = 7,439(Sep 21, 2024)

Location History:

  • Kawasaki, JP (2004 - 2005)
  • Kanagawa, JP (2006 - 2008)
  • Aichi, JP (2016 - 2018)


Years Active: 2004-2018

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: Hiromichi Ota: Innovating Thin Film Transistor Technology

Introduction:

Hiromichi Ota, a talented innovator hailing from Aichi, Japan, has made significant contributions in the field of thin film transistor (TFT) technology. With a notable career working at esteemed institutions like Japan Science and Technology Agency and Canon Kabushiki Kaisha, Ota has garnered recognition for his advancements in amorphous oxide materials and their application in TFTs. Through his research and dedication, Ota has revolutionized the display industry, paving the way for enhanced electronic devices.

Latest Patents:

Ota's latest patents focus on the development of amorphous oxide materials and their utilization in thin film transistors. In particular, his groundbreaking invention encompasses an amorphous oxide with an electron carrier concentration less than 10/cm, revolutionizing the functionality of TFT technology. This amorphous oxide serves as a channel layer in a thin film transistor, enhancing its performance and reliability. By incorporating materials with such characteristics, Ota has opened new avenues for advancements in display technologies.

Career Highlights:

Throughout his career, Hiromichi Ota has demonstrated a keen research interest in utilizing amorphous oxide materials for TFT innovation. His expertise lies in the development of semi-insulating properties with an electron mobility of over 1 cm/(Vsec) and an electron carrier concentration less than 10/cm. These unique characteristics have led to the creation of highly efficient switching elements for LCDs and organic EL displays.

Collaborations:

Ota has had the privilege of collaborating with esteemed scientists in his field, including Hideo Hosono and Masahiro Hirano. Working alongside such talented individuals has undoubtedly fostered a collaborative environment and allowed for the exchange of groundbreaking ideas. Together, they have made substantial contributions to the advancement of thin film transistor technology, further solidifying Ota's reputation as an illustrious innovator in the industry.

Conclusion:

Hiromichi Ota's invaluable contributions to the field of TFT technology and his pioneering research in amorphous oxide materials have reshaped the landscape of electronic devices and display technologies. With eight patents to his name, Ota's dedication and innovative mindset have propelled the industry forward. As his advancements continue to influence future developments in the field, we can only anticipate further breakthroughs from this remarkable inventor.

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