The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 09, 2001
Hiromichi Ota, Kawasaki, JP;
Masahiro Orita, Funabashi, JP;
Hideo Hosono, Yamato, JP;
Masahiro Hirano, Tokyo, JP;
Hiromichi Ota, Kawasaki, JP;
Masahiro Orita, Funabashi, JP;
Hideo Hosono, Yamato, JP;
Masahiro Hirano, Tokyo, JP;
Japan Science & Technology Corporation, Kawaguchi, JP;
Abstract
The present invention provides an ultraviolet-transparent conductive film comprising a GaOcrystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the GaOcrystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.