logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269826 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

Jan. 05, 2011

Amorphous oxide and thin film transistor

Applicants:

Hideo Hosono, Kanagawa, JP;

Masahiro Hirano, Tokyo, JP;

Hiromichi Ota, Aichi, JP;

Toshio Kamiya, Kanagawa, JP;

Kenji Nomura, Tokyo, JP;

Inventors:

Hideo Hosono, Kanagawa, JP;

Masahiro Hirano, Tokyo, JP;

Hiromichi Ota, Aichi, JP;

Toshio Kamiya, Kanagawa, JP;

Kenji Nomura, Tokyo, JP;

Assignees:

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi, JP;

CANON KABUSHIKI KAISHA, Tokyo, JP;

TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Hrayr A Sayadian

Int. Cl.
CPC ...
H01L 29/786 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 14/28 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); C23C 14/0021 (2013.01); C23C 14/086 (2013.01); C23C 14/28 (2013.01); C23C 14/3414 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01);
Abstract

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10/cm, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer, an amorphous oxide having an electron carrier concentration less than 10/cmis used in the channel layer

Find Patent Forward Citations

Loading…