The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Sep. 30, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Pei-Wen Wu, Xinfeng Township, TW;
Sung-Li Wang, Zhubei, TW;
Min-Hsiu Hung, Tainan, TW;
Yida Li, Hsin-Chu, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Huang-Yi Huang, Hsin-chu, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Jyh-Cherng Sheu, Hsin-Chu, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Chi On Chui, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Overhang reduction methods are disclosed. In some embodiments, a method includes forming a recess in a dielectric layer, the recess defining first sidewalls of the dielectric layer. The method also includes depositing a first conductive layer over an upper surface of the dielectric layer and the sidewalls of the dielectric layer, the first conductive layer having a first overhang, removing the first overhang of the first conductive layer using an etchant selected from the group consisting of a halide of the first conductive layer, Cl, BCl, SPM, SC, SC, and combinations thereof, and filling the recess with a second conductive layer.