Xinfeng, China

Pei-Wen Wu

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 6.7

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Xinfeng Township, TW (2018)
  • Xinfeng Township, Hsinchu County, TW (2020)

Company Filing History:


Years Active: 2018-2025

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3 patents (USPTO):Explore Patents

Title: Pei-Wen Wu: Innovator in Semiconductor Technology

Introduction

Pei-Wen Wu is a notable inventor based in Xinfeng, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and functionality of semiconductor devices.

Latest Patents

Wu's latest patents include innovative methods for forming transistor source/drain contacts. This method involves depositing an inter-layer dielectric over a source/drain region, forming a contact opening, and creating a metal-semiconductor alloy region. Additionally, he has developed a formation method for interconnection structures in semiconductor devices, which includes forming a dielectric layer and modifying conductive layers using plasma operations.

Career Highlights

Pei-Wen Wu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to advance semiconductor technology. His expertise in the field has led to the development of cutting-edge methods that enhance device performance.

Collaborations

Wu collaborates with talented colleagues, including Sung-Li Wang and Min-Hsiu Hung, who contribute to his innovative projects and research efforts.

Conclusion

Pei-Wen Wu's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and their applications.

Profile summary based on public USPTO records.
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