Taiwan Semiconductor Manufacturing Comp. Ltd.

Pei-Wen Wu

Yee-Chia Yeo

Chih-Wei Chang

Sung-Li Wang

Cheng-Tung Lin

Jyh-Cherng Sheu

Huang-Yi Huang

Min-Hsiu Hung

Yida Li

Chi On Chui

Chun-Hsien Huang

Wei-Jung Lin

Chi-On Chui

Chih-wei Chang

A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a first layer of a conductive material on the metal-semiconductor alloy region; depositing an isolation material along sidewalls of the contact opening and over the first layer of the conductive material; etching the isolation material to expose the first layer of the conductive material, wherein the isolation material extends along sidewalls of the contact opening after etching the isolation material; and depositing a second layer of the conductive material on the first layer of the conductive material.

Transistor source/drain contacts and methods of forming the same

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Formation method of interconnection structure of semiconductor device

Overhang reduction methods are disclosed. In some embodiments, a method includes forming a recess in a dielectric layer, the recess defining first sidewalls of the dielectric layer. The method also includes depositing a first conductive layer over an upper surface of the dielectric layer and the sidewalls of the dielectric layer, the first conductive layer having a first overhang, removing the first overhang of the first conductive layer using an etchant selected from the group consisting of a halide of the first conductive layer, Cl, BCl, SPM, SC, SC, and combinations thereof, and filling the recess with a second conductive layer.

Metal liner overhang reduction and manufacturing method thereof

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Xinfeng, China

Pei-Wen Wu