The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Nov. 14, 2002
Peijun Ding, Saratoga, CA (US);
Rong Tao, San Jose, CA (US);
Zheng Xu, Foster City, CA (US);
Daniel C. Lubben, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
Michael A. Miller, Mountain View, CA (US);
Arvind Sundarrajan, Santa Clara, CA (US);
Xianmin Tang, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Roderick C. Mosely, Pleasanton, CA (US);
Fusen Chen, Sunnyvale, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Peijun Ding, Saratoga, CA (US);
Rong Tao, San Jose, CA (US);
Zheng Xu, Foster City, CA (US);
Daniel C. Lubben, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
Michael A. Miller, Mountain View, CA (US);
Arvind Sundarrajan, Santa Clara, CA (US);
Xianmin Tang, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Roderick C. Mosely, Pleasanton, CA (US);
Fusen Chen, Sunnyvale, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A magnetron sputter reactor () and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber () an array of auxiliary magnets positioned along sidewalls () of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron () preferably is a small one having a stronger outer pole () of a first polarity surrounding a weaker inner pole () of a second polarity all on a yoke () and rotates about the axis () of the chamber using rotation means (). The auxiliary magnets () preferably have the first polarity to draw the unbalanced magnetic field () towards the wafer (), which is on a pedestal () supplied with power (). Argon () is supplied through a valve (). The target () is supplied with power ().