IDiyas

For the Inventor, By the Inventor

San Jose, CA, United States of America

Rong Tao

LinkedIn
USPTO Granted Patents = 17 

Average Co-Inventor Count = 4.7

ph-index = 9

Forward Citations = 300(Granted Patents)


Company Filing History:

goldMedal17 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 1999-2024

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):
1. 11948885 - Methods and apparatus for forming dual metal interconnects (2024-04-02),
2. 11075165 - Methods and apparatus for forming dual metal interconnects (2021-07-27),
3. 10304732 - Methods and apparatus for filling substrate features with cobalt (2019-05-28),
4. 10047430 - Self-ionized and inductively-coupled plasma for sputtering and resputtering (2018-08-14),
5. 10014179 - Methods for forming cobalt-copper selective fill for an interconnect (2018-07-03),
6. 8993434 - Methods for forming layers on a substrate (2015-03-31),
7. 8696875 - Self-ionized and inductively-coupled plasma for sputtering and resputtering (2014-04-15),
8. 8668816 - Self-ionized and inductively-coupled plasma for sputtering and resputtering (2014-03-11),
9. 8500963 - Sputtering of thermally resistive materials including metal chalcogenides (2013-08-06),
10. 8293647 - Bottom up plating by organic surface passivation and differential plating retardation (2012-10-23),
11. 6875321 - Auxiliary magnet array in conjunction with magnetron sputtering (2005-04-05),
12. 6627542 - Continuous, non-agglomerated adhesion of a seed layer to a barrier layer (2003-09-30),
13. 6610184 - Magnet array in conjunction with rotating magnetron for plasma sputtering (2003-08-26),
14. 6207222 - Dual damascene metallization (2001-03-27),
15. 6200433 - IMP technology with heavy gas sputtering (2001-03-13),

Title: The Innovative Contributions of Rong Tao

Introduction

Rong Tao is a prominent inventor based in San Jose, California, known for his significant contributions to the field of semiconductor technology. With a total of 17 patents to his name, he has made remarkable advancements in methods and apparatus for forming dual metal interconnects.

Latest Patents

Rong Tao's latest patents focus on innovative methods and apparatus for creating dual metal interconnects on a substrate. In these patents, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, with the first liner having a thickness of less than or equal to approximately 12 angstroms. A second liner of a first metal material is then deposited into the features, and the first metal material is reflowed to fill the 1X feature while leaving the wider feature unfilled. Subsequently, a second metal material is deposited on the first metal material and reflowed to fill the wider feature.

Career Highlights

Rong Tao is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in electronic devices, contributing to the efficiency and performance of modern electronics.

Collaborations

Throughout his career, Rong Tao has collaborated with notable colleagues, including Peijun Ding and Roderick Craig Mosely. These collaborations have fostered innovation and have led to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Rong Tao's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.

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