The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jul. 17, 2007
Mengqi YE, San Jose, CA (US);
Keith A. Miller, Sunnyvale, CA (US);
Peijun Ding, Saratoga, CA (US);
Goichi Yoshidome, Emeryville, CA (US);
Rong Tao, San Jose, CA (US);
Mengqi Ye, San Jose, CA (US);
Keith A. Miller, Sunnyvale, CA (US);
Peijun Ding, Saratoga, CA (US);
Goichi Yoshidome, Emeryville, CA (US);
Rong Tao, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.