The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Sep. 07, 2011
Applicants:

Jick M. Yu, San Jose, CA (US);

Rong Tao, San Jose, CA (US);

Xinyu Fu, Pleasanton, CA (US);

Inventors:

Jick M. Yu, San Jose, CA (US);

Rong Tao, San Jose, CA (US);

Xinyu Fu, Pleasanton, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2855 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76868 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01); H01L 2221/1089 (2013.01);
Abstract

Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.


Find Patent Forward Citations

Loading…