The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Nov. 01, 1999
Applicant:
Inventors:
Peijun Ding, San Jose, CA (US);
Rong Tao, San Jose, CA (US);
Barry Chin, Saratoga, CA (US);
Dan Carl, Pleasanton, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/442 ; C23C 1/444 ; C23C 1/458 ;
U.S. Cl.
CPC ...
C23C 1/442 ; C23C 1/444 ; C23C 1/458 ;
Abstract
The present invention generally provides a copper metallization method for depositing a conformal barrier layer and seed layer in a plasma chamber. The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil and a target comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.