The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 13, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Cheng-Hung Chang, Hsinchu, TW;
Ebin Liao, Xinzhu, TW;
Chia-Lin Yu, Sigang Township, TW;
Hsiang-Yi Wang, Hsinchu, TW;
Chun Hua Chang, Zhubei, TW;
Li-Hsien Huang, Puzi, TW;
Darryl Kuo, Hsinchu, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Wen-Chih Chiou, Toufen, TW;
Abstract
A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.