The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Dec. 31, 2003
Rongxiang HU, San Jose, CA (US);
Yongbae Kim, Cupertino, CA (US);
Sang-yun Lee, Stanford, CA (US);
Hiroaki Takikawa, Chagasaki, JP;
Shumay Dou, Saratoga, CA (US);
Sarah Neuman, San Mateo, CA (US);
Philippe Schoenborn, San Mateo, CA (US);
Keith Chao, Saratoga, CA (US);
Dilip Vijay, Foster City, CA (US);
Kai Zhang, Saratoga, CA (US);
Masaichi Eda, Gresham, OR (US);
Rongxiang Hu, San Jose, CA (US);
Yongbae Kim, Cupertino, CA (US);
Sang-Yun Lee, Stanford, CA (US);
Hiroaki Takikawa, Chagasaki, JP;
Shumay Dou, Saratoga, CA (US);
Sarah Neuman, San Mateo, CA (US);
Philippe Schoenborn, San Mateo, CA (US);
Keith Chao, Saratoga, CA (US);
Dilip Vijay, Foster City, CA (US);
Kai Zhang, Saratoga, CA (US);
Masaichi Eda, Gresham, OR (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.