This inventor holds 2 USPTO granted patents. Top assignee: Lsi Logic Corporation. Active years: 2004-2005.
Company Filing History:
Years Active: 2004-2005
Title: Sarah Neuman: Innovator in Dual Damascene Structures
Introduction
Sarah Neuman is a prominent inventor based in San Mateo, CA (US). She has made significant contributions to the field of semiconductor technology, particularly in the area of dual damascene structures. With a total of 2 patents, her work has been instrumental in advancing manufacturing processes in the industry.
Latest Patents
One of Sarah's latest patents is titled "Method of preventing resist poisoning in dual damascene structures." This innovative method provides a solution for forming a dual damascene interconnect in a dielectric layer. The process involves etching a first aperture in the dielectric, forming a poison barrier layer over part of the dielectric to prevent resist poisoning, and then creating a patterned mask over the poison barrier layer. A second aperture is subsequently etched into the dielectric layer, ensuring that at least part of the first aperture shares the same area as at least part of the second aperture.
Career Highlights
Sarah Neuman is currently employed at LSI Logic Corporation, where she continues to develop cutting-edge technologies. Her expertise in semiconductor manufacturing has positioned her as a key player in her field.
Collaborations
Throughout her career, Sarah has collaborated with notable colleagues, including Rongxiang Hu and Yongbae Kim. These partnerships have fostered innovation and contributed to the success of her projects.
Conclusion
In summary, Sarah Neuman is a talented inventor whose work in dual damascene structures has made a significant impact on semiconductor technology. Her innovative methods and collaborations highlight her dedication to advancing the industry.