Chagasaki, Japan

Hiroaki Takikawa


Average Co-Inventor Count = 9.2

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Kanagawa, JP (2004)
  • Chagasaki, JP (2004 - 2005)

Company Filing History:


Years Active: 2004-2005

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3 patents (USPTO):Explore Patents

Title: Hiroaki Takikawa: Innovator in Dual Damascene Structures

Introduction

Hiroaki Takikawa is a notable inventor based in Chigasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of dual damascene structures. With a total of 3 patents to his name, Takikawa's work has had a substantial impact on the industry.

Latest Patents

One of Takikawa's latest patents is a method of preventing resist poisoning in dual damascene structures. This innovative method involves forming a dual damascene interconnect in a dielectric layer. The process begins with etching a first aperture in the dielectric. A poison barrier layer is then formed over part of the dielectric to prevent resist poisoning. Following this, a patterned mask is created over the poison barrier layer, and a second aperture is etched into the dielectric layer, ensuring that at least part of the first aperture shares the same area as at least part of the second aperture.

Career Highlights

Hiroaki Takikawa is currently employed at LSI Logic Corporation, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise in dual damascene structures has positioned him as a key player in the field.

Collaborations

Throughout his career, Takikawa has collaborated with talented individuals such as Yongbae Kim and Sang-Yun Lee. These collaborations have further enhanced his innovative capabilities and contributed to the success of his projects.

Conclusion

Hiroaki Takikawa is a distinguished inventor whose work in dual damascene structures has advanced semiconductor technology. His innovative methods and collaborations with other experts highlight his significant contributions to the field.

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