Rongxiang Hu

Title: Innovations of Rongxiang Hu

Introduction

Rongxiang Hu is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on improving processes in integrated circuit fabrication.

Latest Patents

One of his latest patents is titled "Method of preventing resist poisoning in dual damascene structures." This patent describes a method for forming a dual damascene interconnect in a dielectric layer. The process involves etching a first aperture in the dielectric and forming a poison barrier layer to prevent resist poisoning. A patterned mask is then created over the barrier layer, followed by etching a second aperture that shares area with the first.

Another significant patent is "High selectivity SiC etch in integrated circuit fabrication." This invention enhances the etch process for silicon carbide versus silicon oxide and other low dielectric constant materials. The selectivity is improved by adding hydrogen or ammonia to the etch chemistry, which is crucial for effective semiconductor manufacturing.

Career Highlights

Rongxiang Hu has worked at LSI Logic Corporation, where he has applied his expertise in semiconductor technology. His innovative approaches have contributed to advancements in integrated circuit design and fabrication.

Collaborations

He has collaborated with notable coworkers such as Philippe Schoenborn and Masaichi Eda, further enhancing the impact of his work in the industry.

Conclusion

Rongxiang Hu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in integrated circuit fabrication.