The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1998
Filed:
May. 27, 1997
Akihiko Isao, Saitama, JP;
Ryoichi Kobayashi, Saitama, JP;
Nobuyuki Yoshioka, Hyogo, JP;
Yaichiro Watakabe, Hyogo, JP;
Junji Miyazaki, Hyogo, JP;
Kouichiro Narimatsu, Hyogo, JP;
Shigenori Yamashita, Hyogo, JP;
Ulvac Coating Corporation, Saitama, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.