The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1997
Filed:
Apr. 27, 1995
Kazushi Tomita, Kawaguchi, JP;
Yoshikazu Ito, Yamanashi-ken, JP;
Motohiro Hirano, Hachioji, JP;
Akira Nozawa, Nirasaki, JP;
Hiromitsu Matsuo, Shirane-machi, JP;
Shunichi Iimuro, Yamanashi-ken, JP;
Shigeki Tozawa, Nirasaki, JP;
Yutaka Miura, Koufu, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Tokyo Electronics Co., Ltd., Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Tokyo Electron Yamanashi Limited, Nirasaki, JP;
Abstract
The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.