The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 25, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chieh Wu, Hsinchu, TW;
Ting Hao Kuo, Hsinchu, TW;
Kuo-Lung Pan, Hsinchu, TW;
Po-Yuan Teng, Hsinchu, TW;
Yu-Chia Lai, Miaoli County, TW;
Shu-Rong Chun, Hsinchu, TW;
Mao-Yen Chang, Kaohsiung, TW;
Wei-Kang Hsieh, Hsinchu, TW;
Pavithra Sriram, Hsinchu, TW;
Hao-Yi Tsai, Hsinchu, TW;
Po-Han Wang, Hsinchu, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.