The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Sep. 25, 2018
Intel Corporation, Santa Clara, CA (US);
Van H. Le, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Matthew Metz, Portland, OR (US);
Miriam Reshotko, Portland, OR (US);
Benjamin Chu-Kung, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Abhishek Sharma, Hillsboro, OR (US);
Nazila Haratipour, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques for a thin-film transistor (TFT), which may include a substrate oriented in a horizontal direction and a transistor above the substrate. The transistor includes a gate electrode above the substrate, a gate dielectric layer around the gate electrode, and a channel layer around the gate dielectric layer, all oriented in a vertical direction substantially orthogonal to the horizontal direction. Furthermore, a source electrode or a drain electrode is above or below the channel layer, separated from the gate electrode, and in contact with a portion of the channel layer. Other embodiments may be described and/or claimed.