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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10510681 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Aug. 06, 2018

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chuei-Tang Wang, Taichung, TW;

Vincent Chen, Taipei, TW;

Tzu-Chun Tang, Kaohsiung, TW;

Chen-Hua Yu, Hsinchu, TW;

Ching-Feng Yang, Taipei, TW;

Ming-Kai Liu, Hsinchu, TW;

Yen-Ping Wang, Changhua County, TW;

Kai-Chiang Wu, Hsinchu, TW;

Shou Zen Chang, Hsinchu, TW;

Wei-Ting Lin, Taipei, TW;

Chun-Lin Lu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/78 (2013.01); H01L 23/3178 (2013.01); H01L 23/528 (2013.01); H01L 23/585 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/17 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/08137 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/08238 (2013.01); H01L 2224/16148 (2013.01); H01L 2924/1434 (2013.01);
Abstract

A semiconductor device includes a semiconductor die, an insulative layer, a plurality of conductive features, a dummy redistribution layer (RDL), and an Electromagnetic Interference (EMI) shield. The insulative layer covers the semiconductor die. The conductive features substantially surround the insulative layer. The dummy RDL is over the insulative layer and electrically disconnected from the semiconductor die. The EMI shield is in contact with the plurality of conductive features and the dummy RDL.

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