This inventor holds 16 USPTO granted patents and 2 published patent applications. Top assignees: Wuhan Research Institute of Posts and Telecommunications, Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2014-2026.
Company Filing History:
7 out of 22 
7 out of 1,190 
2 out of 282 Years Active: 2014-2026
Title: Innovations of Inventor Zhu Yang
Introduction
Zhu Yang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory devices and semiconductor technology. With a total of 16 patents to his name, his work has had a substantial impact on the industry.
Latest Patents
One of Zhu Yang's latest patents is a method and structure for forming stairs in three-dimensional memory devices. This invention discloses embodiments of a three-dimensional (3D) memory device and fabrication methods thereof. In this example, a 3D memory device includes a memory stack having a plurality of stairs. Each stair may include interleaved one or more conductor layers and one or more dielectric layers. Each of the stairs includes one of the conductor layers on a top surface of the stair, with the conductor layer having a bottom portion in contact with one of the dielectric layers and a top portion exposed by the memory stack. The lateral dimension of the top portion may be less than that of the bottom portion, and the end of the top portion facing away from the memory stack laterally exceeds the bottom portion by a distance.
Another notable patent involves semiconductor device fabrication. This patent provides methods for fabricating semiconductor devices. In some examples, the method includes forming a stack of layers having a first region and a second region, with the stack including at least a first layer. A hard mask layer is formed on the stack of layers in the first region, followed by patterning the stack of layers in the second region. This patterning removes a portion of the stack in the second region and exposes a side of the stack. The method further includes covering at least the side of the stack with a second layer that has a lower removal rate than the first layer, followed by the removal of the hard mask layer.
Career Highlights
Zhu Yang has worked with notable organizations such as the Wuhan Research Institute of Posts and Telecommunications and Yangtze Memory Technologies Co., Ltd. His experience in these institutions has allowed him to develop innovative technologies that advance the field of memory and semiconductor devices.
Collaborations
Zhu has collaborated with several professionals in his field, including Qi Yang and Shaohua Yu. These collaborations have contributed to the successful development of his patents and innovations.
Conclusion
Zhu Yang is a distinguished inventor whose work in three-dimensional