The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Dec. 08, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xinxin Liu, Wuhan, CN;

Jingjing Geng, Wuhan, CN;

Zhu Yang, Wuhan, CN;

Chen Zuo, Wuhan, CN;

Xiangning Wang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H10B 41/50 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/50 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02);
Abstract

Embodiments of a three-dimensional (3D) memory device and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a memory stack having a plurality of stairs. Each stair may include interleaved one or more conductor layers and one or more dielectric layers. Each of the stairs includes one of the conductor layers on a top surface of the stair, the one of the conductor layers having (i) a bottom portion in contact with one of the dielectric layers, and (ii) a top portion exposed by the memory stack and in contact with the bottom portion. A lateral dimension of the top portion may be less than a lateral dimension of the bottom portion. An end of the top portion that may be facing away from the memory stack laterally exceeds the bottom portion by a distance.


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