Company Filing History:
Years Active: 2023-2025
Title: Innovations of Xiangning Wang in Three-Dimensional Memory Devices
Introduction
Xiangning Wang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of three-dimensional memory devices. With a total of 11 patents to his name, Wang's work has been instrumental in advancing memory storage solutions.
Latest Patents
Wang's latest patents include a method and structure for forming stairs in three-dimensional memory devices. This innovation involves embodiments of a 3D memory device that features a memory stack with multiple stairs. Each stair consists of interleaved conductor and dielectric layers, with specific dimensions designed to optimize performance. Another notable patent is the gateline mask design for removing sacrificial gateline polysilicon within the stair step area. This semiconductor device includes a stack of alternating word line layers and insulating layers, enhancing the efficiency of memory devices.
Career Highlights
Xiangning Wang is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the semiconductor industry. Wang's innovative designs and methods have contributed to the advancement of memory technology, making significant impacts on the market.
Collaborations
Wang has collaborated with notable colleagues, including Bin Yuan and Zhu Yang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.
Conclusion
Xiangning Wang's contributions to three-dimensional memory devices exemplify the importance of innovation in technology. His patents and collaborative efforts continue to shape the future of semiconductor technology.