Hwaseong, South Korea

Zhiliang Xia

This inventor holds 9 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhiliang Xia. Retrieved from https://idiyas.com/inventor/zhiliang-xia-597uackv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 2015-2024

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9 patents (USPTO):Explore Patents

Title: Zhiliang Xia: Innovator in Vertical Memory Devices

Introduction

Zhiliang Xia is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 9 patents. His work focuses on innovative technologies that enhance the performance and efficiency of memory storage solutions.

Latest Patents

One of Zhiliang Xia's latest patents is for vertical memory devices and methods of manufacturing the same. This invention includes a vertical memory device that comprises a channel, a dummy channel, a plurality of gate electrodes, and a support pattern. The channel extends in a first direction that is perpendicular to the upper surface of a substrate. The dummy channel also extends from the upper surface of the substrate in the same direction. The gate electrodes are formed at various levels, spaced apart from each other on the substrate. Each gate electrode surrounds the outer sidewalls of both the channel and the dummy channel. The support pattern is positioned between the upper surface of the substrate and the first gate electrode, which is located at the lowest level. The channel and the dummy channel make contact between the upper surface of the substrate and the first gate electrode.

Career Highlights

Zhiliang Xia is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His innovative work has positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Zhiliang Xia has collaborated with notable coworkers, including Jang-Gn Yun and Ahn-Sik Moon. Their combined expertise contributes to the success of their projects and advancements in memory technology.

Conclusion

Zhiliang Xia is a distinguished inventor whose work in vertical memory devices has made a significant impact in the field. His contributions continue to shape the future of memory technology, showcasing the importance of innovation in this rapidly evolving industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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