The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Oct. 23, 2013
Chiho Kim, Pyeongtaek-si, KR;
Zhiliang Xia, Hwaseong-si, KR;
Sung Hee Lee, Osan-si, KR;
Nara Kim, Seongnam-si, KR;
Dae Sin Kim, Hwaseong-si, KR;
Chiho Kim, Pyeongtaek-si, KR;
Zhiliang Xia, Hwaseong-si, KR;
Sung Hee Lee, Osan-si, KR;
Nara Kim, Seongnam-si, KR;
Dae Sin Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A test method of a semiconductor device and a semiconductor test apparatus. The test method includes providing a semiconductor device including a substrate having an active region and an isolation region, a volatile device cell including a gate insulation layer and a gate on the active region, a junction region in the active region, a capacitor connected to the junction region, and a passing gate on the isolation region, providing a first test voltage to the gate and a second test voltage greater than the first test voltage to the passing gate to deteriorate interfacial defects of the gate insulation layer, and measuring retention characteristics of the volatile device cell.