The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Feb. 15, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Jaehun Jung, Seoul, KR;
Zhiliang Xia, Hwaseong-si, KR;
Daewoong Kang, Seoul, KR;
Dae Sin Kim, Hwaseong-si, KR;
Kwang Soo Seol, Seongnam-si, KR;
Homin Son, Seoul, KR;
Seunghyun Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes gate electrodes stacked on a substrate, a semiconductor pattern penetrating the gate electrodes and connected to the substrate, and a charge storage layer between the semiconductor pattern and the gate electrodes. The charge storage layer includes a first charge storage layer between the semiconductor pattern and the gate electrodes, a second charge storage layer between the first charge storage layer and the semiconductor pattern, and a third charge storage layer between the first charge storage layer and the gate electrodes. An energy band gap of the first charge storage layer is smaller than those of the second and third charge storage layers. The first charge storage layer is thicker than the second and third charge storage layers.