Zheng-Long Chen

Title: Innovations of Zheng-Long Chen

Introduction

Zheng-Long Chen is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on the development of advanced semiconductor devices and manufacturing methods.

Latest Patents

One of his latest patents is for a semiconductor device and manufacturing method that includes a substrate, a deep well, a doped region, a gate, and source and drain regions. The deep well is of a first conductivity type in the substrate, while the doped region is in the deep well with an impurity of a second conductivity type. The field oxide is positioned over the deep well and interfaces with the doped region. The gate is situated over the field oxide, and the source and drain regions are located over the substrate, laterally separated by the doped region and the field oxide. Another notable patent involves a semiconductor device that comprises a substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first and second gate structures are positioned over the substrate and include a shielding electrode, a gate electrode, and a first gate dielectric layer. The epitaxy layer cups the underside of both gate structures and contains a doped region with a non-uniform dopant concentration along a lateral direction.

Career Highlights

Zheng-Long Chen has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and TSMC China Company Limited. His experience in these organizations has allowed him to contribute to cutting-edge technologies and innovations in semiconductor manufacturing.

Collaborations

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Conclusion

Zheng-Long Chen's contributions to semiconductor technology through his patents and career achievements highlight his role as an influential inventor in the field. His work continues to impact the development of advanced semiconductor devices.