The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jul. 12, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc China Company Limited, Shanghai, CN;
Zheng-Long Chen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC CHINA COMAPNY LIMITED, Shanghai, CN;
Abstract
A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.