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Yokosuka, Japan

Yusuke Kohyama

USPTO Granted Patents = 75

Average Co-Inventor Count = 1.7

ph-index = 15

Forward Citations = 782(Granted Patents)

Forward Citations (Not Self Cited) = 773(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kawasaki, JP (1992 - 1999)
Yokosuka, JP (1994 - 2009)
Poughkeepsie, NY (US) (2005 - 2010)
Yokohama, JP (1991 - 2012)
Kanagawa-ken, JP (2011 - 2012)

Company Filing History:

70 out of 52,766

Kabushiki Kaisha Toshiba

Toshiba America Electronic Components, Inc.

Kabuhsiki Kaisha Toshiba

Years Active: 1991-2012

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Areas of Expertise:

Solid-State Imaging Device

Semiconductor Device

Back-Illuminated Image Pickup

Stacked Capacitor Storage

Dynamic Random-Access Memory

Silicon on Insulator

Low-Leakage Transistor

Fused Semiconductor Technology

Trench Capacitor

Damascene Technique

Electric Fuse

Memory Device Fabrication

75 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8310003 - Solid-state imaging device with vertical gate electrode and method of manufacturing the same (2012-11-13),

2. 8138533 - Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same (2012-03-20),

3. 8133753 - Solid-state image pickup device and method for manufacturing same (2012-03-13),

4. 8039883 - Solid-state image pickup device and method for manufacturing same (2011-10-18),

5. 7859073 - Back-illuminated type solid-state image pickup device and camera module using the same (2010-12-28),

6. 7696537 - Step-embedded SiGe structure for PFET mobility enhancement (2010-04-13),

7. 7615813 - Semiconductor device using fuse/anti-fuse system (2009-11-10),

8. 7605042 - SOI bottom pre-doping merged e-SiGe for poly height reduction (2009-10-20),

9. 7550355 - Low-leakage transistor and manufacturing method thereof (2009-06-23),

10. 7537981 - Silicon on insulator device and method of manufacturing the same (2009-05-26),

11. 7514752 - Reduction of short-circuiting between contacts at or near a tensile-compressive boundary (2009-04-07),

12. 7235882 - Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same (2007-06-26),

13. 7227228 - Silicon on insulator device and method of manufacturing the same (2007-06-05),

14. 7187027 - Stacked capacitor-type semiconductor storage device and manufacturing method thereof (2007-03-06),

15. 7163894 - Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same (2007-01-16),

Title: The Innovative Journey of Yusuke Kohyama

Introduction: Yusuke Kohyama is a pioneering inventor hailing from Yokosuka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kohyama's recent patents include advancements in renewable energy storage systems and cutting-edge solutions for sustainable transportation.

Career Highlights: With a career spanning over two decades, Kohyama has established himself as a leading figure in the tech industry, with a focus on developing eco-friendly technologies that have the potential to revolutionize the way we live.

Collaborations: Throughout his career, Kohyama has collaborated with top research institutions, universities, and forward-thinking companies to bring his innovative ideas to life. His collaborative spirit has led to the successful implementation of several game-changing inventions.

Conclusion: Yusuke Kohyama's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified his position as a visionary inventor in the world of technology. His contributions continue to inspire and shape the landscape of innovation for years to come.

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