The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Apr. 18, 2005
Applicant:
Yusuke Kohyama, Poughkeepsie, NY (US);
Inventor:
Yusuke Kohyama, Poughkeepsie, NY (US);
Assignee:
Toshiba America Electronic Components, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor device structures, and methods for making such structures, are described that provide for fully-doped transistor source/drain regions while reducing or even avoiding boron penetration into the transistor channel, thereby improving the performance of the transistor. In addition, such a transistor may benefit from an SiGe layer that applies compressive stress to the transistor channel, thereby further improving the performance of the transistor.
Kohyama, Yusuke. (2009). Soi bottom pre-doping merged e-sige for poly height reduction (U.S. Patent No. 7605042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7605042
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile