Taoyuan, Taiwan

Yung-Feng Lin

This inventor holds 38 USPTO granted patents and 2 published patent applications, primarily in Memory Technology. Top assignee: Macronix International Co., Ltd.. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung-Feng Lin. Retrieved from https://idiyas.com/inventor/yung-feng-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 

% Patents Active = 89.5

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 295(Granted Patents)


Location History:

  • Hsin-Chu, TW (2003)
  • Dasi Township, Taoyuan County, TW (2008 - 2015)
  • Taoyuan County, TW (2009 - 2016)
  • Taoyuan, TW (2008 - 2023)

Company Filing History:


Years Active: 2003-2025

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Areas of Expertise:
High Density Memory
Read Performance
Leakage Current Compensation
Multi-Bit Flash Memory
Crossbar Array
Command Decoding
Voltage Regulation
Sense Amplifier
Word Line Boost
Phase Change Memory
Data Sensing Arrangement
Low Pin Count Interface
38 patents (USPTO):Explore Patents

Title: Yung-Feng Lin: Pioneering Innovations in Memory Technology

Introduction

Yung-Feng Lin, an accomplished inventor based in Taoyuan County, Taiwan, has made significant contributions to the field of memory technology with a remarkable portfolio of 38 patents. His innovations focus on enhancing data storage capabilities in high-density memory systems, showcasing his expertise and dedication to advancing technology.

Latest Patents

Among his latest inventions, Lin has developed a high-density memory device that incorporates a reference memory using grouped cells. This innovative memory device is designed to enhance data sensing and retrieval processes. The unique feature of this invention lies in its ability to generate reference signals that facilitate efficient data access in a 3D data memory environment. The conversion circuitry within the device plays a crucial role in transforming signals from the reference memory into a usable reference signal, which is then utilized by a sense amplifier for accurate data retrieval from selected memory cells.

Career Highlights

Yung-Feng Lin is currently employed at Macronix International Co., Ltd., a leading semiconductor manufacturer. His role at the company allows him to collaborate closely with other talented individuals in the field, contributing to the company's reputation as an innovator in memory technology. Over the years, Lin has consistently demonstrated his ability to push the boundaries of memory research and development.

Collaborations

Lin has worked alongside respected colleagues, including Chun-Hsiung Hung and Su-Chueh Lo. Their collaboration significantly enhances the innovative culture at Macronix, fostering an environment where groundbreaking ideas can flourish and lead to further advancements in memory technology.

Conclusion

In conclusion, Yung-Feng Lin stands out as a prominent inventor whose contributions to high-density memory systems are paving the way for future innovations in data storage technologies. With a strong foundation in research and development, Lin continues to exemplify the spirit of innovation that drives the tech industry forward. His commitment to enhancing memory technology promises exciting developments in the years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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