The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jun. 06, 2023
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Teng-Hao Yeh, Hsinchu, TW;
Hang-Ting Lue, Hsinchu, TW;
Cheng-Lin Sung, Taichung, TW;
Yung-Feng Lin, Taoyuan, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4099 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 11/4099 (2013.01); G11C 16/102 (2013.01); G11C 16/28 (2013.01);
Abstract
A memory device includes a high density or 3D data memory and a 3D reference memory. The reference memory is used to generate a reference signal used to sense data in the data memory. Conversion circuitry converts signals from one memory cell or a group of memory cells in the reference memory into a reference signal. The reference signal is applied to a sense amplifier to sense data stored in a selected memory cell in the data memory.