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For the Inventor, By the Inventor

Baoshan, China

Yun Chen Hsieh

This inventor holds 19 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yun Chen Hsieh. Retrieved from https://idiyas.com/inventor/yun-chen-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 31(Granted Patents)


Location History:

  • Hsinchu, TW (2020)
  • Baoshan Township, TW (2019 - 2024)

Company Filing History:

goldMedal19 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2019-2025

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19 patents (USPTO):Explore Patents
1. 12381176 - Semiconductor structure having a conductive feature comprising an adhesion layer and a metal region over and contacting the adhesion layer (2025-08-05),
2. 12315819 - Method of forming RDLs and structure formed thereof (2025-05-27),
3. 12062603 - Semiconductor device having via sidewall adhesion with encapsulant (2024-08-13),
4. 12020983 - Processes for reducing leakage and improving adhesion (2024-06-25),
5. 11742317 - Process including a re-etching process for forming a semiconductor structure (2023-08-29),
6. 11651994 - Processes for reducing leakage and improving adhesion (2023-05-16),
7. 11600574 - Method of forming RDLS and structure formed thereof (2023-03-07),
8. 11587902 - Semiconductor structure and method of forming the same (2023-02-21),
9. 11527466 - Semiconductor device having via sidewall adhesion with encapsulant (2022-12-13),
10. 11404308 - Semiconductor package and method (2022-08-02),
11. 10971442 - Semiconductor device having via sidewall adhesion with encapsulant (2021-04-06),
12. 10964591 - Processes for reducing leakage and improving adhesion (2021-03-30),
13. 10886231 - Method of forming RDLS and structure formed thereof (2021-01-05),
14. 10867874 - Semiconductor device and method (2020-12-15),
15. 10840129 - Semiconductor package and method (2020-11-17),

Title: Inventor Yun Chen Hsieh - Revolutionizing Technology in Baoshan

Introduction: Yun Chen Hsieh is a visionary inventor based in Baoshan, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yun Chen Hsieh holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a career spanning over two decades, Yun Chen Hsieh has worked with leading tech companies in China, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Yun Chen Hsieh has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Inventor Yun Chen Hsieh's relentless pursuit of innovation and his passion for creating impactful technologies continue to inspire the next generation of inventors and entrepreneurs in Baoshan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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