The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Apr. 05, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Yun Chen Hsieh, Baoshan Township, TW;

Hui-Jung Tsai, Hsinchu, TW;

Hung-Jui Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/288 (2006.01); H01L 21/3213 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/285 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/288 (2013.01); H01L 21/32134 (2013.01); H01L 21/32136 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76885 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 23/3128 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 21/28568 (2013.01); H01L 23/49866 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/35121 (2013.01);
Abstract

Embodiments include forming a die, the die including a pad and a passivation layer over the pad. A via is formed to the pad through the passivation layer. A solder cap is formed on the via, where a first material of the solder cap flows to the sidewall of the via. In some embodiments, the via is encapsulated in a first encapsulant, where the first encapsulant is a polymer or molding compound selected to have a low co-efficient of thermal expansion and/or low curing temperature. In some embodiments, the first material of the solder cap is removed from the sidewall of the via by an etching process and the via is encapsulated in a first encapsulant.


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