Hopewell Junction, NY, United States of America

Yu Lu

This inventor holds 28 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory Technology. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Infineon Technologies North America Corp.. Active years: 2004-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu Lu. Retrieved from https://idiyas.com/inventor/yu-lu-v915rap2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 46.4

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 175(Granted Patents)


Location History:

  • Ridgefield, CT (US) (2014 - 2016)
  • Hopewell Junction, NY (US) (2004 - 2017)

Company Filing History:


Years Active: 2004-2017

Loading Chart...
Areas of Expertise:
Magnetic Random Access Memory
Carbon Transistors
High-k Metal Gate
Magnetic Tunnel Junctions
Stacked Carbon-based FETs
Magnetic Shift Register
Spin-Momentum-Transfer
Magnetically Lined Conductors
Multi-bit Memory Cells
Vertical Stacking
Adiabatic Switching
28 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Yu Lu in Semiconductor Technology

Introduction

Yu Lu, based in Hopewell Junction, NY, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 28 patents, he has been at the forefront of innovation within the industry. His inventions reflect a deep understanding of materials and processes that enhance semiconductor device performance.

Latest Patents

Among Yu Lu's most notable recent patents are:

1. **Partial Sacrificial Dummy Gate with CMOS Device with High-k Metal Gate** - This patent describes a gate structure in a semiconductor device that includes a gate stack formed on a substrate, which consists of three sections: a bottom portion, a top portion, and a sacrificial cap layer. The invention enhances the gate's performance by incorporating gate spacers, source and drain regions, and a nitride encapsulation after removing the sacrificial cap layer. Additionally, it features an organic planarizing layer that facilitates silicidation over the source and drain regions.

2. **Self-Aligned Embedded Gate Carbon Transistors** - This invention focuses on transistors that contain self-aligned source and drain regions. The method involves embedding a gate structure in a substrate recess, removing surrounding substrate material, and developing a channel layer over the gate structure. The source and drain contacts are formed in the recesses, extending above the channel layer, significantly improving transistor efficiency.

Career Highlights

Yu Lu has worked with esteemed companies in the semiconductor industry, including IBM and Infineon Technologies North America Corp. His experience at these leading firms has allowed him to apply his innovative ideas effectively within practical applications, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Yu Lu has collaborated with talented professionals such as Dechao Guo and Shu-Jen Han. These partnerships have fostered an environment of creativity and shared knowledge, leading to the successful development of groundbreaking semiconductor innovations.

Conclusion

Yu Lu's extensive patent portfolio reflects his commitment to pushing the boundaries of semiconductor technology. His inventions not only demonstrate technical expertise but also contribute to the evolution of the industry. As innovators like Yu Lu continue to make strides in their fields, the future of technology remains bright.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…