The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Aug. 16, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Dechao Guo, Fishkill, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Yu Lu, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, New York, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/66045 (2013.01); H01L 29/778 (2013.01); H01L 29/1606 (2013.01); H01L 51/0048 (2013.01); H01L 51/0545 (2013.01);
Abstract
Transistors with self-aligned source/drain regions a gate structure embedded in a substrate; self-aligned source and drain contacts embedded in the substrate around the gate structure; and a channel layer over the gate structure and self-aligned source and drain contacts. The source and drain contacts extend above the channel layer.