The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
May. 09, 2013
International Business Machines Corporation, Armonk, NY (US);
Dechao Guo, Fishkill, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Yu Lu, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods and systems for forming stacked transistors. Such methods include forming a lower channel layer on a substrate; forming a pair of vertically aligned gate regions over the lower channel layer; forming a pair of vertically aligned source regions and a pair of vertically aligned drain regions on the lower channel material, each pair separated by an insulator; forming an upper channel material over the source regions, drain regions, and gate regions; and providing electrical access to the source, drain, and gate regions.